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參數資料
型號： W39V080FA
廠商： WINBOND ELECTRONICS CORP
英文描述： 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
中文描述： 100萬】8的CMOS固件樞紐接口閃存
文件頁數： 6/35頁
文件大小： 301K
代理商： W39V080FA
W39V080FA
-
6
-
6.6 Sector Erase Command
Sector erase is a six bus cycles operation. There are two "unlock" write cycles, followed by writing the
"set-up" command. Two more "unlock" write cycles then follows by the Sector erase command. The
Sector address (any address location within the desired Sector) is latched on the rising edge of R/#C in
programmer mode, while the command (30H) is latched on the rising edge of #WE.
Sector erase does not require the user to program the device prior to erase. When erasing a Sector,
the remaining unselected sectors are not affected. The system is not required to provide any controls or
timings during these operations.
The automatic Sector erase begins after the erase command is completed, right from the rising edge of
the #WE pulse for the last Sector erase command pulse and terminates when the data on DQ7, Data
Polling, is "1" at which time the device returns to the read mode. Data Polling must be performed at an
address within any of the sectors being erased.
Refer to the Erase Command flow Chart using typical command strings and bus operations.
6.7 Program Operation
The W39V080FA is programmed on a byte-by-byte basis. Program operation can only change logical
data "1" to logical data "0." The erase operation, which changed entire data in main memory and/or
boot block from "0" to "1", is needed before programming.
The program operation is initiated by a 4-byte command cycle (see Command Codes for Byte
Programming). The device will internally enter the program operation immediately after the
byte-program command is entered. The internal program timer will automatically time-out (9
μ
S
typ.-T
BP
) once it is completed and then return to normal read mode. Data polling and/or Toggle Bits can
be used to detect end of program cycle.
6.8 Dual BIOS
The W39V080FA provides a solution for Dual-BIOS application. In FWH mode, when D/#F is low, the
device functions as a full-chip partition of 8M-bit which address ranges from FFFFFh to 00000h with
A[19:0]. If D/#F is driven high, the device functions as a dual-block partition that each block consists of
4M-bit. For dual-block partition, there is only one 4M-bit block, either upper or lower, can be
accessed. The U/#L pin selects either upper or lower 4M-bit block and its address ranges from
7FFFFh to 00000h with A[19:0]. When U/#L is low, the lower 4M-bit block will be selected; while, U/#L
is high, the upper 4M-bit block will be selected.
6.9 Hardware Data Protection
The integrity of the data stored in the W39V080FA is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A #WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) V
DD
Power Up/Down Detection: The programming and read operation are inhibited when V
DD
is
less than 2.0V typical.
(3) Write Inhibit Mode: Forcing #OE low or #WE high will inhibit the write operation. This prevents
inadvertent writes during power-up or power-down periods.
相關PDF資料
PDF描述
W39V080FAP 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAPZ 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAQ 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAQZ 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAT 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
相關代理商/技術參數
參數描述
W39V080FAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAPZ 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAQ 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAQZ 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W39V080FAT 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
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