- 您現在的位置：買賣IC網 > PDF目錄363875 > W27C512-45 (WINBOND ELECTRONICS CORP) BOX 2.53X1.73X.65 W/3 BTNS BLK PDF資料下載
參數資料
| 型號： | W27C512-45 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | BOX 2.53X1.73X.65 W/3 BTNS BLK |
| 中文描述： | 64K X 8 EEPROM 12V, 45 ns, PDIP28 |
| 封裝： | 0.600 INCH, PLASTIC, DIP-28 |
| 文件頁數： | 2/15頁 |
| 文件大小： | 161K |
| 代理商： | W27C512-45 |
W27C512
- 2 -
FUNCTIONAL DESCRIPTION
Read Mode
Like conventional UVEPROMs, the W27C512 has two control functions, both of which produce data
at the outputs. CE is for power control and chip select. OE/V
PP
controls the output buffer to gate data
to the output pins. When addresses are stable, the address access time (T
ACC
) is equal to the delay
from CE to output (T
CE
), and data are available at the outputs T
OE
after the falling edge of OE/V
PP
,
if T
ACC
and T
CE
timings are met.
Erase Mode
The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs,
which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half
an hour), the W27C512 uses electrical erasure. Generally, the chip can be erased within 100 mS by
using an EPROM writer with a special erase algorithm.
Erase mode is entered when OE/V
PP
is raised to V
PE
(14V), V
CC
= V
CE
(5V), A9 = V
PE
(14V), A0
low, and all other address pins low and data input pins high. Pulsing
CE
low starts the erase
operation.
Erase Verify Mode
After an erase operation, all of the bytes in the chip must be verified to check whether they have been
successfully erased to "1" or not. The erase verify mode ensures a substantial erase margin if V
CC
=
V
CE
(3.75V), CE low, and OE/V
PP
low.
Program Mode
Programming is performed exactly as it is in conventional UVEPROMs, and programming is the only
way to change cell data from "1" to "0." The program mode is entered when
OE
/V
PP
is raised to V
PP
(12V), V
CC
= V
CP
(5V), the address pins equal the desired addresses, and the input pins equal the
desired inputs. Pulsing CE low starts the programming operation.
Program Verify Mode
All of the bytes in the chip must be verified to check whether they have been successfully
programmed with the desired data or not. Hence, after each byte is programmed, a program verify
operation should be performed. The program verify mode automatically ensures a substantial
program margin. This mode will be entered after the program operation if
OE
/V
PP
low
and
CE
low.
Erase/Program Inhibit
Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different
data. When CE high, erasing or programming of non-target chips is inhibited, so that except for the
CE and OE/V
PP
pins, the W27C512 may have common inputs.
相關PDF資料 |
PDF描述 |
|---|---|
| W27C512P-45 | BOX 2.53X1.73X.65 W/4 BTNS BLK |
| W27C512P-70 | 64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512-90 | FAN 24 DC MUFFIN MC24H3 |
| W27C520W-70 | 64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C520W-90 | 64K X 8 ELECTRICALLY ERASABLE EPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W27C512-45Z | 功能描述:IC EEPROM 512KBIT 45NS 28DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W27C512-70 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512P-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512P-45 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
發布緊急采購，3分鐘左右您將得到回復。