国产精品成人VA在线观看-国产乱妇乱子视频在播放-国产日韩精品一区二区三区在线-国模精品一区二区三区

參數(shù)資料
型號(hào): W39V080FAT
廠商: WINBOND ELECTRONICS CORP
元件分類(lèi): PROM
英文描述: 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
中文描述: 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO40
封裝: 10 X 20 MM, TSOP-40
文件頁(yè)數(shù): 3/35頁(yè)
文件大小: 301K
代理商: W39V080FAT
W39V080FA
Publication Release Date: Dec. 13, 2005
- 3 -
Revision A5
1. GENERAL DESCRIPTION
The W39V080FA is an 8-megabit, 3.3-volt only CMOS flash memory organized as 1M
×
8 bits. For
flexible erase capability, the 8Mbits of data are divided into 16 uniform sectors of 64 Kbytes. The device
can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
required for accelerated program. The unique cell architecture of the W39V080FA results in fast
program/erase operations with extremely low current consumption. This device can operate at two
modes, Programmer bus interface mode and FWH bus interface mode. As in the Programmer interface
mode, it acts like the traditional flash but with a multiplexed address inputs. But in the FWH interface
mode, this device complies with the Intel FWH specification. The device can also be programmed and
erased using standard EPROM programmers.
2. FEATURES
Single 3.3-volt operations:
3.3-volt Read
3.3-volt Erase
3.3-volt Program
Fast program operation:
VPP = 12V
Byte-by-Byte programming: 9
μ
S (typ.)
Fast erase operation:
Sector erase 0.9 Sec. (typ.)
Fast read access time: Tkq 11 nS
Endurance: 30K cycles (typ.)
Twenty-year data retention
16 Even sectors with 64K bytes
Any individual sector can be erased
Dual BIOS function
Full-chip partition with 8M-bit or dual-block
partition with 4M-bit
Hardware protection:
#TBL supports 64-Kbyte Boot Block
hardware protection
#WP supports the whole chip except Boot
Block hardware protection
Hardware Features
Ready/#Busy output (RY/#BY)
Detect program or erase cycle completion
Hardware reset pin (#RESET)
Reset the internal state machine to the read
mode
VPP input pin
Acceleration (ACC) function accelerates
program timing
Low power consumption
Read Active current: 15 mA
(typ. for FWH mode)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
Available packages: 32L PLCC, 32L STSOP,
40L TSOP(10 x 20 mm), 32L PLCC Lead
free, 32L STSOP Lead free and 40L TSOP
(10 x 20 mm) Lead free
相關(guān)PDF資料
PDF描述
W39V080FATZ 1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W3EG128M72ETSU202AJD3 1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
W3EG128M72ETSU202D3 1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
W3EG128M72ETSU202JD3 1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
W3EG128M72ETSU262AJD3 1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W39V080FATZ 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
W3A41A100K4T2A 功能描述:電容器陣列與網(wǎng)絡(luò) 100v 10pF 10% Tol. RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長(zhǎng)度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類(lèi)型:SMD/SMT 系列:PG
W3A41A100KAT1A 功能描述:電容器陣列與網(wǎng)絡(luò) 100volts 10pF 10% 0612 C0G 4CAPS RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長(zhǎng)度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類(lèi)型:SMD/SMT 系列:PG
W3A41A100KAT2A 功能描述:電容器陣列與網(wǎng)絡(luò) 100volts 10pF 10% 4cap NPO RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長(zhǎng)度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類(lèi)型:SMD/SMT 系列:PG
W3A41A101JAT2F 功能描述:電容器陣列與網(wǎng)絡(luò) 100v 100pF 5% Tol. RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長(zhǎng)度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類(lèi)型:SMD/SMT 系列:PG