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參數資料
| 型號： | W29D040C |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 512K×8bit CMOS Flash Memory(512K×8位CMOS閃速存儲器) |
| 中文描述： | 為512k × 8位的CMOS閃存（為512k × 8位的CMOS閃速存儲器） |
| 文件頁數： | 6/40頁 |
| 文件大小： | 280K |
| 代理商： | W29D040C |
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W29D040C
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Power-up of the device with
WE
= CE = VIL and OE = VIH will not accept commands on the rising
edge of
WE
. The internal state machine is automatically reset to the read mode on power-up.
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command
register. Writing incorrect address and data values or writing them in the improper sequence will reset
the device to the read mode. "Command Definitions" defines the valid register command sequences.
Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector
Erase operation is in progress. Moreover, both Reset/Read commands are functionally equivalent,
resetting the device to the read mode.
Read Command
The device will automatically power-up in the read state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value
ensures that no spurious alteration of the memory content occurs during the power transition.
The device will automatically returns to read state after completing an Embedded Program or Embedded
Erase algorithm.
Refer to the AC Read Characteristics and Waveforms for the specific timing parameters.
Reset Command
Writing the reset command to the device resets the device to the read mode.
Once in the autoselect mode, exiting is accomplished by issuing the reset command sequence, which
returns the device to the read mode. Please note that the software reset command is ignored during an
internal program or erase operation.
Autoselect Command
Flash memories are intended for use in applications where the local CPU can alter memory contents. As
such, manufacture and device codes must be accessible while the device resides in the target system.
PROM programmers typically access the signature codes by raising A9 to a high voltage. However,
multiplexing high voltage onto the address lines is not generally a desirable system design practice.
The device contains an autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the autoselect command sequence into the command
register. Following the command write, a read cycle from address XX00H retrieves the manufacture code
of DAH. A read cycle from address XX01H returns the device code (W29D040C = 26).
Furthermore, the write protect status of sectors can be read in this mode. Scanning the sector
addresses (A18, A17, and A16) while (A6, A1, A0) = (0, 1, 0) will produce a logical "1" at device output
DQ0 for a protected sector.
To terminate the operation, it is necessary to write the read command sequence into the register.
Byte Program Command
The device is programmed on a byte-by-byte basis. Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing two "unlock" write cycles, followed by the program
set-up command. The program address and data are written next, which in turn initiate the Embedded
program algorithm. Addresses are latched on the falling edge of CE or
WE
, whichever happens later
and the data is latched on the rising edge of CE or
WE
, whichever happens first. The rising edge of CE
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