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參數資料
| 型號： | W29D040C |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 512K×8bit CMOS Flash Memory(512K×8位CMOS閃速存儲器) |
| 中文描述： | 為512k × 8位的CMOS閃存（為512k × 8位的CMOS閃速存儲器） |
| 文件頁數： | 14/40頁 |
| 文件大小： | 280K |
| 代理商： | W29D040C |
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W29D040C
- 14 -
Command Definitions
COMMAND
BUS CYCLES
SEQUENCE
FIRST
SECOND
THIRD
FOURTH
FIFTH
SIXTH
(NOTE 2)
ADDR
DATA
ADDR
DATA
ADDR
DATA
ADDR
DATA
ADDR
DATA
ADDR
DATA
Read
RA
RD
Manufacturer ID
2AAA
AA
5555
55
2AAA
90
00
DA
Device ID
2AAA
AA
5555
55
2AAA
90
01
26
Sector Protect
2AAA
AA
5555
55
2AAA
90
(SA)
00
Verify (Note 3)
02
01
Program
2AAA
AA
5555
55
2AAA
A0
(PA)
(PD)
Chip Erase
2AAA
AA
5555
55
2AAA
80
2AAA
AA
5555
55
2AAA
10
Sector Erase
2AAA
AA
5555
55
2AAA
80
2AAA
AA
5555
55
(SA)
30
Erase Suspend (Note 4)
×××
B0
Erase Resume
×××
30
Legend :
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Address are latched on the falling edge of the
WE
or CE pulse.
PD = Data to be programmed at location PA. Data is latched on the rising edge of the
WE
orCE pulse.
SA = Address of the sector to be erased. Address bits A18
A16 uniquely select any sector.
Note :
1. All values are in hexadecimal.
2. See "Device Bus Operations" for description of bus operations.
3. The data is 00H for an unprotected sector group and 01H for a protected sector group. The complete bus address
composed of the sector address (A18
A6), A1 = 1, and A0 = 0.
4. Read and program functions in non-erasing sector are allowed in the Erase Suspend mode.
5. Unless otherwise noted, address bits A18-A11 =
×
= don
′
t care.
相關PDF資料 |
PDF描述 |
|---|---|
| W29EE011P | 128K X 8 CMOS FLASH MEMORY |
| W29EE011P-15 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| W29EE011T-90 | 128K X 8 CMOS FLASH MEMORY |
| W29EE011 | 128K X 8 CMOS FLASH MEMORY |
| W29EE011-15 | 128K X 8 CMOS FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W29EE011 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE011-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE011-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE01115B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE011-15B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|PLASTIC |
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