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參數資料
型號: W28V400B
廠商: WINBOND ELECTRONICS CORP
英文描述: 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
中文描述: 4分(為512k × 8/256K × 16)SMARTVOLTA通用閃存
文件頁數: 38/48頁
文件大小: 1822K
代理商: W28V400B
W28V400B/T
- 38 -
V
DD
= 3.3V
±
0.3V, T
A
= 0
°
C to +70
°
C
PARAMETER
SYM.
MIN.
MAX.
UNIT
Write Cycle Time
t
AVAV
100
nS
#RESET High Recovery to #CE Going Low (Note 2)
t
PHEL
1
μ
S
#WE Setup to #CE Going Low
t
WLEL
0
nS
#CE Pulse Width
t
ELEH
70
nS
#RESET V
HH
Setup to #CE Going High (Note 2)
t
PHHEH
100
nS
#WP V
IH
Setup to #CE Going High (Note 2)
t
SHEH
100
nS
V
PP
Setup to #CE Going High (Note2)
t
VPEH
100
nS
Address Setup to #CE Going High (Note 3)
t
AVEH
50
nS
Data Setup to #CE Going High (Note 3)
t
DVEH
50
nS
Data Hold from #CE High
t
EHDX
0
nS
Address Hold from #CE High
t
EHAX
5
nS
#WE Hold from #CE High
t
EHWH
0
nS
#CE Pulse Width High
t
EHEL
25
nS
#CE High to RY/#BY Going Low
t
EHRL
100
nS
Write Recovery before Read
t
EHGL
0
nS
V
PP
Hold from Valid SRD, RY/#BY High (Note 2, 4)
t
QVVL
0
nS
#RESET V
HH
Hold from Valid SRD, RY/#BY High (Note 2, 4)
T
QVPH
0
nS
#WP V
IH
Hold from Valid SRD, RY/#BY High (Note 2, 4)
t
QVSL
0
nS
#BYTE Setup to #CE Going High (Note 7)
t
FVEH
50
nS
#BYTE Hold from #CE High (Note 7)
t
EHFV
100
nS
Note:
See 5.0V V
DD
Alternative #CE-Controlled Writes for notes 1 through 7.
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相關代理商/技術參數
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