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參數資料
| 型號： | W26L11 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×16bit CMOS Static RAM(64K×16位CMOS靜態RAM) |
| 中文描述： | 64K的× 16位的CMOS靜態RAM（64K的× 16位的CMOS靜態RAM）的 |
| 文件頁數： | 8/10頁 |
| 文件大?。?/td> | 134K |
| 代理商： | W26L11 |
Preliminary W26L11
- 8 -
DATA RETENTION CHARACTERISTICS
(V
DD
= 2.7v~3.6v,
±
0.2V; V
SS
= 0V; T
A
(
°
C) = 0 to 70)
PARAMETER
SYM.
TEST CONDITIONS
POWER
MIN. TYP. MAX. UNIT
V
DD
for Data Retention
V
DR
CS
≥
V
DD
-0.2V ,
V
IN
≥
V
DD
-0.2V
or V
IN
≤
0.2V
I
DDDR
CS
≥
V
DD
-0.2V
or V
CC
-0.2V, or
V
IN
≤
0.2V
T
CDR
See data retention
waveform
2.0
-
3.6
V
Data Retention Current
-
0.5
10
μ
A
Chip Deselect to Data
Retention Time
0
-
-
nS
Operation Recovery
Time
T
R
TRC*
-
-
nS
* Read Cycle Time
DATA RETENTION WAVEFORM
T
CDR
-0.2V
DD
V
V
DD
CS
T
R
CS
V
DR
1.5V
=
=
0.9 x
DD
V
0.9 x
DD
V
ORDERING INFORMATION
PART NO.
ACCESS
TIME (nS)
OPERATING
VOLTAGE
(V
)
STANDBY
CURRENT MAX (
A)
PACKAGE
W26L11H-70LL
70
2.7V/3.6V
15
44-pin TSOP
W26L11I-70LL
70
2.7V/3.6V
15
44-pin 400 mil SOJ
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
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