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參數資料
| 型號： | W26L11 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×16bit CMOS Static RAM(64K×16位CMOS靜態RAM) |
| 中文描述： | 64K的× 16位的CMOS靜態RAM（64K的× 16位的CMOS靜態RAM）的 |
| 文件頁數： | 5/10頁 |
| 文件大?。?/td> | 134K |
| 代理商： | W26L11 |
Preliminary W26L11
Publication Release Date: October 1999
- 5 -
Revision A1
TIMING WAVEFORMS
Read Cycle 1
(Address Controlled,
CS
=
OE
=
UB
=
LB
=
V
IL
,
WE
=
V
IH
)
Address
T
T
T
T
D
OH
AA
RC
OH
OUT
Read Cycle 2
(Chip Select Controlled,
OE
=
V
IL
,
WE
=
V
IH
)
Address
RC
T
T
ACS
T
CS
CHZ
T
CLZ
D
T
BLZ
OUT
UB / LB
T
BHZ
T
OE
OHZ
T
OLZ
T
BA
T
OE
HIGH-Z
HIGH-Z
Notes:
1. WE is high for read cycle.
2. Device is continuously selected.
CS
=
OE
=
LB
= Low
CS
= OE = LB = Low
3. Address valid prior to or coincident with
CS
transition low.
Timing Waveforms, continued
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