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參數資料
| 型號： | W26L11 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×16bit CMOS Static RAM(64K×16位CMOS靜態RAM) |
| 中文描述： | 64K的× 16位的CMOS靜態RAM（64K的× 16位的CMOS靜態RAM）的 |
| 文件頁數： | 4/10頁 |
| 文件大小： | 134K |
| 代理商： | W26L11 |
Preliminary W26L11
- 4 -
AC Characteristics, continued
(V
DD
= 2.7~3.6V; V
SS
= 0V; T
A
(
°
C) = 0 to 70)
(1) Read Cycle
PARAMETER
SYM.
T
RC
T
AA
T
ACS
T
OE
T
BA
W26L11-70
UNIT
nS
nS
nS
nS
nS
MIN.
70
MAX.
-
70
70
35
35
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
UB, LB Access Time
Output Hold from Address Change
Chip Select to Output in Low Z
Chip Disable to Output in High Z
Output Enable to Output in Low Z
Output Disable to Output in High Z
T
OH
T
CLZ*
T
CHZ*
T
OLZ*
T
OHZ
*
T
BLZ*
3
10
0
5
0
10
25
25
15
nS
nS
nS
nS
nS
nS
UB, LB Select to Output in Low Z
UB , LB Deselect to Output in High Z
These parameters are sampled but not 100% tested.
T
BHZ*
0
nS
(2) Write Cycle
PARAMETER
SYM.
W26L11-70
UNIT
MIN.
MAX.
Write Cycle Time
T
WC
70
nS
Chip Select to End of Write
T
CW
60
nS
Address Valid to End of Write
T
AW
60
nS
Address Setup Time
T
AS
0
nS
UB, LB Select to End of Write
T
BW
30
nS
Write Pulse Width
T
WP
50
nS
Write Recovery Time
CS, WE
T
WR
0
nS
Data Valid to End of Write
T
DW
30
25
nS
Data Hold from End of Write
T
DH
0
nS
Write to Output in High Z
T
WHZ*
0
nS
Write to Output in Low Z
T
WLZ*
5
-
nS
These parameters are sampled but not 100% tested.
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