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參數資料
| 型號： | W49F201T-45 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 128K X 16 CMOS FLASH MEMORY |
| 中文描述： | 128K X 16 FLASH 5V PROM, 45 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數： | 6/23頁 |
| 文件大小： | 267K |
| 代理商： | W49F201T-45 |
Preliminary W49F201
- 6 -
TABLE OF COMMAND DEFINITION
COMMAND
NO. OF
1ST CYCLE 2ND CYCLE 3RD CYCLE 4TH CYCLE 5TH CYCLE 6TH CYCLE
DESCRIPTION
Read
Chip Erase
Main Memory Erase
Word Program
Boot Block Lockout
Product ID Entry
Product ID Exit
(1)
Product ID Exit
(1)
Cycles
Addr. Data
Addr. Data
Addr. Data
Addr. Data
Addr. Data
Addr. Data
1
6
6
4
6
3
3
1
A
IN
D
OUT
5555 AA
5555 AA
5555 AA
5555 AA
5555 AA
5555 AA
XXXX F0
2AAA 55
2AAA 55
2AAA 55
2AAA 55
2AAA 55
2AAA 55
5555 80
5555 80
5555 A0
5555 80
5555 90
5555 F0
5555 AA
5555 AA
A
IN
D
IN
5555 AA
2AAA 55
2AAA 55
5555 10
SA 30
2AAA 55
5555 40
Notes:
1. Address Format: A14
A0 (Hex); Data Format: DQ15
DQ8 (Don't Care); DQ7-DQ0 (Hex)
2. Either one of the two Product ID Exit commands can be used.
3. SA: Sector Address
SA = 03XXXh for Parameter Block1
SA = 05XXXh for Parameter Block2
SA = 1FXXXh
- for Main Memory Block when Boot Block lockout feature is activated
- for both Boot Block and Main Memory Block when Boot Block lockout feature is inactivated
相關PDF資料 |
PDF描述 |
|---|---|
| W49F201T-45B | 128K X 16 CMOS FLASH MEMORY |
| W49F201T-55 | 128K X 16 CMOS FLASH MEMORY |
| W49F201T-55B | 128K X 16 CMOS FLASH MEMORY |
| W49L102 | 64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V電源供電的CMOS閃速存儲器) |
| W49L102P-70B | 64K X 16 CMOS 3.3V FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W49F201T-45B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 CMOS FLASH MEMORY |
| W49F201T-55 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 CMOS FLASH MEMORY |
| W49F201T-55B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 CMOS FLASH MEMORY |
| W49I_1GAST WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| W49L102 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY |
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