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參數資料
| 型號： | W49F201T-45 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 128K X 16 CMOS FLASH MEMORY |
| 中文描述： | 128K X 16 FLASH 5V PROM, 45 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數： | 12/23頁 |
| 文件大小： | 267K |
| 代理商： | W49F201T-45 |
Preliminary W49F201
Publication Release Date: June 1999
- 12 -
Revision A1
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to V
ss
Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°
C
°
C
V
Storage Temperature
-65 to +150
D.C. Voltage on Any Pin to Ground Potential except OE
-0.5 to V
DD
+1.0
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
-1.0 to V
DD
+1.0
V
Voltage on OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Operating Characteristics
(V
DD
= 5.0V
±
10
%
, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP.
MAX.
Power Supply
Current
I
CC
CE=OE= V
IL
, WE= V
IH
, all DQs open
Address inputs = V
IL
/V
IH
, at f = 5 MHz
-
25
50
mA
Standby V
DD
Current (TTL input)
I
SB
1
CE = V
IH
, all DQs open
Other inputs = V
IL
/V
IH
-
2
3
mA
Standby V
DD
Current
(CMOS input)
I
SB
2
CE = V
DD
-0.3V, all DQs open
Other inputs = V
DD
-0.3V/GND
-
20
100
μ
A
Input Leakage
Current
I
LI
V
IN
= GND to V
DD
-
-
10
μ
A
Output Leakage
Current
I
LO
V
OUT
= GND to V
DD
-
-
10
μ
A
Input Low Voltage
V
IL
-
-0.3
-
0.8
V
Input High Voltage
V
IH
-
2.0
-
V
DD
+0.5
V
Output Low Voltage
V
OL
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage
V
OH
I
OH
= -0.4 mA
2.4
-
-
V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| W49F201T-45B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 CMOS FLASH MEMORY |
| W49F201T-55 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 CMOS FLASH MEMORY |
| W49F201T-55B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 CMOS FLASH MEMORY |
| W49I_1GAST WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| W49L102 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 16 CMOS 3.3V FLASH MEMORY |
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