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參數資料
| 型號： | W45NM60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmes TM Power MOSFET |
| 中文描述： | N溝道600V的- 0.09ohm - 45A條至247 MDmes商標功率MOSFET |
| 文件頁數： | 4/12頁 |
| 文件大小： | 286K |
| 代理商： | W45NM60 |
Electrical characteristics
STW45NM60
4/12
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 μA, V
GS
= 0
600
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
10
μA
V
DS
= Max rating, T
C
= 125 °C
100
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±30V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
3
4
5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 22.5A
0.09
0.11
Dynamic
Symbol
Parameter
Test conditions
Min. Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=
22.5A
15
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3800
1250
80
pF
pF
pF
C
oss eq.(2)
2.
C
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V to 480V
340
pF
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
test signal level = 20mV
open drain
1.4
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400V, I
D
= 45A,
V
GS
= 10V
Figure 14
96
31
43
134
nC
nC
nC
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