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參數(shù)資料
| 型號(hào)： | W45NM60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmes TM Power MOSFET |
| 中文描述： | N溝道600V的- 0.09ohm - 45A條至247 MDmes商標(biāo)功率MOSFET |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 286K |
| 代理商： | W45NM60 |
STW45NM60
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate- source voltage
±30
V
I
D
Drain current (continuous) at T
C
= 25°C
45
A
I
D
Drain current (continuous) at T
C
= 100°C
28
A
I
DM (1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
180
A
P
TOT
Total dissipation at T
C
= 25°C
417
W
Derating factor
3.33
W/°C
dv/dt
(2)
2.
I
SD
< 45A, di/dt < 400A/μs, V
DD
< 80% V
(BR)DSS
Peak diode recovery voltage slope
15
V/ns
T
stg
Storage temperature
–65 to 150
°C
T
j
Max. operating junction temperature
150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.3
°C/W
Rthj-amb
Thermal resistance junction-amb
30
°C/W
T
l
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
15
A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
850
mJ
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