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參數資料
| 型號： | W3EG7266S-D3 |
| 英文描述： | 512MB - 64Mx72 DDR SDRAM REGISTERED w/PLL |
| 中文描述： | 512MB的- 64Mx72 DDR SDRAM的注冊瓦特/鎖相環 |
| 文件頁數： | 4/12頁 |
| 文件大?。?/td> | 184K |
| 代理商： | W3EG7266S-D3 |
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG7266S-D3
PRELIMINARY
October 2005
Rev. 3
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CC
T
STG
P
D
I
OS
Value
-0.5 to 3.6
-1.0 to 3.6
-55 to +150
9
50
Units
V
V
°C
W
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
0°C
≤
T
A
≤
70°C, V
CC
= 2.5V ± 0.2V
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
V
CC
V
CC
V
REF
V
TT
V
IH
V
IL
V
OH
V
OL
Min
2.3
2.3
1.15
1.15
Max
2.7
2.7
1.35
1.35
Unit
V
V
V
V
V
V
V
V
V
REF
+ 0.15
-0.3
V
TT
+ 0.76
—
V
CC
+ 0.3
V
REF
-0.15
—
V
TT
-0.76
CAPACITANCE
T
A
= 25°C. f = 1MHz, V
CC
= 2.5V
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
Input Capacitance (CK0#,CK0)
Input Capacitance (CS0#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)(DQS)
Data input/output capacitance (CB0-CB7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
Max
6.5
6.5
6.5
5.5
6.5
8
6.5
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
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