- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363884 > W3EG264M72EFSU403D4 1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA PDF資料下載
參數(shù)資料
| 型號(hào)： | W3EG264M72EFSU403D4 |
| 英文描述： | 1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA |
| 中文描述： | 1GB的- 2x64Mx72 DDR SDRAM，可緩沖，F(xiàn)BGA封裝 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 209K |
| 代理商： | W3EG264M72EFSU403D4 |
W3EG264M72EFSUxxxD4
9
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
September 2004
Rev. 0
ADVANCED
32. Normal Output Drive Curves:
a. The full variation in driver pull-down current from minimum to maximum process,
temperature and voltage will lie within the outer bounding lines of the V-I curve of
Figure 8, Pull-Down Characteristics.
b. The variation in driver pull-down current within nominal limits of voltage and
temperature is expected, but not guaranteed, to lie within the inner bounding
lines of the V-I curve of Figure 8, Pull-Down Characteristics.
c. The full variation in driver pull-up current from minimum to maximum process,
temperature and voltage will lie within the outer bounding lines of the V-I curve of
Figure 9, Pull-Up Characteristics.
d. The variation in driver pull-up current within nominal limits of voltage and
temperature is expected, but not guaranteed, to lie within the inner bounding
lines of the V-I curve of Figure 9, Pull-Up Characteristics.
e. The full variation in the ratio of the maximum to minimum pull-up and pull-down
current should be between 0.71 and 1.4, for device drain-to-source voltages from
0.1V to 1.0V, and at the same voltage and temperature.
f. The full variation in the ratio of the nominal pull-up to pull-down current should be
unity ±10 percent, for device drain-to-source voltages from 0.1V to 1.0V.
33. The voltage levels used are derived from a mini-mum V
CC
level and the referenced
test load. In practice, the voltage levels obtained from a properly terminated bus will
provide significantly different voltage values.
34. V
IH
overshoot: V
IH
(MAX) = V
CCQ
+ 1.5V for a pulse width < 3ns and the pulse width
can not be greater than 1/3 of the cycle rate. V
IL
undershoot: V
IL
(MIN) = -1.5V for a
pulse width !5 3ns and the pulse width can not be greater than 1/3 of the cycle rate.
35. V
CC
and V
CCQ
must track each other.
36. t
HZ
(MAX) will prevail over t
DQSCK
(MAX) + t
RPST
(MAX) condition. t
LZ
(MIN) will
prevail over t
DQSCK
(MIN) + t
RPRE
(MAX) condition.
37. t
RPST
end point and t
RPRE
begin point are not referenced to a specific voltage level
but specify when the device output is no longer driving (t
RPST
), or begins driving
(t
RPRE
).
38. During Initialization, V
CCQ
, V
TT
, and V
REF
must be equal to or less than V
CC
+ 0.3V.
Alternatively, V
TT
may be 1.35V maximum during power up, even if V
CC
/V
CCQ
are
0.0V, provided a minimum of 42 0 of series resistance is used between the V
TT
supply and the input pin.
39. The current part operates below the slowest JEDEC operating frequency of 83 MHz.
As such, future die may not reflect this option.
40. Random addressing changing and 50 percent of data changing at every transfer.
41. Random addressing changing and 100 percent of data changing at every transfer.
42. CKE must be active (high) during the entire time a refresh command is executed.
That is, from the time the AUTO REFRESH command is registered, CKE must be
active at each rising clock edge, until t
REF
later.
43. I
DD2N
specifies the DQ, DQS, and DM to be driven to a valid high or low logic level.
I
DD2Q
is similar to I
DD2F
except I
DD2Q
specifies the address and control inputs to
remain stable. Although I
DD2F
, I
DD2N
, and I
DD2Q
are similar, I
DD2F
is “worst case.”
44. Whenever the operating frequency is altered, not including jitter, the DLL is required
to be reset. This is followed by 200 clock cycles.
45. Leakage number reflects the worst case leakage possible through the module pin,
not what each memory device contributes.
46. When an input signal is HIGH or LOW, it is defined as a steady state logic HIGH or
LOW.
47. The -335 speed grade will operate with t
RAS
(MIN) = 40ns and t
RAS
(MAX) =
120,000ns at any slower frequency.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3EG264M72EFSUXXXD4 | 1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA |
| W3EG64128S202AD4 | 1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL |
| W3EG64128S202BD4 | 1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL |
| W3EG64128S262AD4 | 1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL |
| W3EG64128S262BD4 | 1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG264M72EFSUXXXD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA |
| W3EG64128S202AD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL |
| W3EG64128S202BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL |
| W3EG64128S202D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM UNBUFFERED |
| W3EG64128S202JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM UNBUFFERED |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。