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參數資料
| 型號： | W3EG128M72ETSU-D3 |
| 英文描述： | 1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL |
| 中文描述： | 1GB的- 128Mx72 DDR SDRAM的無緩沖ECC瓦特/鎖相環 |
| 文件頁數： | 4/14頁 |
| 文件大小： | 277K |
| 代理商： | W3EG128M72ETSU-D3 |
W3EG128M72ETSU-D3
-JD3
-AJD3
ADVANCED
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
January 2005
Rev. 0
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
OS
Value
– 0.5 ~ 3.6
–1.0 ~ 3.6
– 55 ~ +150
9
50
Units
V
V
°C
W
mA
DC CHARACTERISTICS
0°C ≤ T
A
≤ 70°C, V
CC
= 2.5V ± 0.2V (100, 133 and 166MHz), V
CCQ
= 2.6V ± 0.1V (200MHz)
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
V
IL
V
OH
V
OL
Min
2.3
2.3
1.15
1.15
Max
2.7
2.7
1.35
1.35
Unit
V
V
V
V
V
V
V
V
V
REF
+ 0.15
– 0.3
V
TT
+ 0.76
—
V
CCQ
+ 0.3
V
REF
– 0.15
—
V
TT
– 0.76
CAPACITANCE
T
A
= 25°C, f = 1MHz, V
CC
= 2.5V ± 0.2V (100, 133 and 166MHz), V
CCQ
= 2.6V ± 0.1V (200MHz)
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0,CKE1)
Input Capacitance (CK0,CK0#)
Input Capacitance (CS0#,CS1#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output Capacitance (DQ0-DQ63)(DQS)
Data input/output Capacitance (CB0-CB7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
Max
29
29
29
5.5
29
8
29
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
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