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參數資料
| 型號： | W29C022 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 256K x 8 CMOS FLASH MEMORY |
| 中文描述： | 256K × 8的CMOS閃存 |
| 文件頁數： | 4/20頁 |
| 文件大?。?/td> | 166K |
| 代理商： | W29C022 |
W29C022
- 4 -
Hardware Data Protection
The integrity of the data stored in the W29C022 is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A #WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) V
DD
Power Up/Down Detection: The write and read operation are inhibited when V
DD
is less than
2.5V.
(3) Write Inhibit Mode: Forcing #OE low, #CE high, or #WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) V
DD
power-on delay: When V
DD
reaches its sense level, the device will automatically timeout for
5 mS before any write (erase/program) operation.
Chip Erase Modes
The entire device can be erased by using a six-byte software command code. See the Software Chip
Erase Timing Diagram.
Boot Block Operation
There are two boot blocks (8K bytes each) in this device, which can be used to store boot code. One of
them is located in the first 8K bytes and the other is located in the last 8K bytes of the memory. The
first 8K or last 8K of the memory can be set as a boot block by using a seven-byte command
sequence.
See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set the
data for the designated block cannot be erased or programmed (programming lockout); other memory
locations can be changed by the regular programming method. Once the boot block programming
lockout feature is activated, the chip erase function will be disabled. In order to detect whether the boot
block feature is set on the two 8K blocks, users can perform a six-byte command sequence: enter the
product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for
specific code), and then read from address "00002 hex" (for the first 8K bytes) or "3FFF2 hex" (for the
last 8K bytes). If the output data is "FF hex," the boot block programming lockout feature is activated; if
the output data is "FE hex," the lockout feature is deactivated and the block can be programmed.
To return to normal operation, perform a three-byte command sequence to exit the identification mode.
For the specific code, see Command Codes for Identification/Boot Block Lockout Detection.
Data Polling (DQ7)- Write Status Detection
The W29C022 includes a data polling feature to indicate the end of a write cycle. When the W29C022
is in the internal write cycle, any attempt to read DQ7 from the last byte loaded during the page/byte-
load cycle will receive the complement of the true data. Once the write cycle is completed. DQ7 will
show the true data. See the #DATA Polling Timing Diagram.
相關PDF資料 |
PDF描述 |
|---|---|
| W29C040T-90 | 512K X 8 CMOS FLASH MEMORY |
| W29C040P-90 | 512K X 8 CMOS FLASH MEMORY |
| W29C040 | 512K X 8 CMOS FLASH MEMORY |
| W29C040P-12 | 512K X 8 CMOS FLASH MEMORY |
| W29C040P-12B | 512K X 8 CMOS FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W29C040 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 CMOS FLASH MEMORY |
| W29C040-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|DIP|32PIN|PLASTIC |
| W29C040-12N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29C040-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|DIP|32PIN|PLASTIC |
| W29C040-90B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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