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參數(shù)資料
型號(hào): W28V400T
廠商: WINBOND ELECTRONICS CORP
英文描述: 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
中文描述: 4分(為512k × 8/256K × 16)SMARTVOLTA通用閃存
文件頁數(shù): 18/48頁
文件大小: 1822K
代理商: W28V400T
W28V400B/T
- 18 -
Bus Operation
Command
Comments
Data = 20H
Addr = Within Block
to be Erased
Data = D0H
Addr = Within Block
to be Erased
Status Register Data
Write
Erase Setup
Write
Erase Confirm
Read
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent block erasures.
Full status check can be done after each block erase or
after a sequence of block erasures.
Write FFH after the last operation to place device in
r ad array mode.
Start
Write 20H
Block Address
Block Erase
Complete
Read Status
Register
SR.7=
Full Status
Check if Desired
Write D0H,
Block Address
1
0
Suspend Block
Erase Loop
Suspend
Block Erase
No
Yes
Full STATUS CHECK PROCEDURE
Read Status Register
Data(See Above)
SR.3=
SR.1=
SR.4,5=
SR.5=
Block Erase
Sucessfully
0
0
0
0
1
1
1
1
Vpp Range Error
Device Protect Error
Command Sequence
Block Erase Error
Error
Bus Operation Command
Comments
Check SR.3
1 = V
PP
Error Detect
Check SR.1
1 = Device Protect Detect
Standby
Standby
Standby
Check SR.4, 5
Both 1 = Command
Sequence Error
Standby
Check SR.5
1 = Block Erase Error
SR.5, SR.4, SR.3 and SR.1 are only cleared by the
Clear Status.
Register Command in cases where multiple blocks are
erased before full status is checked.
If error is detected, clear the Status Register before
attempting retry or other error recovery.
Figure 5. Automated Block Erase Flowchart
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