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參數資料
| 型號： | W25P025A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×32 Burst Pipeline High-Speed CMOS Static RAM(64K×32位同步脈沖管線高速CMOS靜態RAM) |
| 中文描述： | 64K的管道爆裂× 32高速CMOS靜態RAM（64K的× 32位同步脈沖管線高速的CMOS靜態RAM）的 |
| 文件頁數： | 7/17頁 |
| 文件大小： | 313K |
| 代理商： | W25P025A |
W25P025A
Publication Release Date: January 1998
- 7 -
Revision A3
OPERATING CHARACTERISTICS
(V
DD
= 3.3V
±
5%, V
DDQ
= 2.5V
±
5%, V
SS
/V
SSQ
= 0V, T
A
= 0 to 70
°
C, W25P025AX-n, or T
A
= 0 to 85
°
C, W25P025AX-nF)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Low Voltage
V
IL
-
-0.5
-
+0.7
V
Input High Voltage
V
IH
For all pins of W25P025AX-n &
input pins of W25P025AX-nF
+1.7
-
5.5
V
For I/O pins of W25P025AX-nF
+1.7
-
V
DD
+0.3
Input Leakage
Current
I
LI
V
IN
= V
SSQ
W25P025
AX-n
-5
-
+5
μ
A
to V
DDQ
W25P025
AX-nF
-2
-
+2
Output Leakage
Current
I
LO
V
I/O
= V
SSQ
to
V
DDQ,
and data I/O
W25P025
AX-n
-10
-
+ 10
μ
A
pins in high-Z state
defined in truth
table
W25P025
AX-nF
-2
-
+2
Output Low Voltage V
OL
I
OL
= +0.5 mA
-
-
0.2
V
Output High Voltage V
OH
I
OH
= -0.5 mA
2.0
-
-
V
Operating Current
I
DD
T
CYC
≥
min.,
W25P025AX-n
-
-
250
mA
I/O = 0 mA
W25P025AX-nF
220
Standby Current
I
SBT
Unselected mode defined in
truth table, V
IN
, V
IO
= V
IH
(min.)
/V
IL
(max.) T
CYC
≥
min.
Unselected mode, V
IN
≤
0.2V
F
REQ
= 0, Output Disable
-
-
50
mA
I
SBC
-
-
5
mA
ZZ Mode Current
I
ZZ
ZZ mode, T
CYC
≥
min.
-
-
5
mA
Note: Typical characteristics are measured at V
DD
= 3.3V, V
DDQ
= 2.5V, T
A
= 25
°
C.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Input / Output Capacitance
C
I/O
V
OUT
= 0V
8
pF
Note: These parameters are sampled but not 100% tested.
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