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參數資料
| 型號： | W25P025A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×32 Burst Pipeline High-Speed CMOS Static RAM(64K×32位同步脈沖管線高速CMOS靜態RAM) |
| 中文描述： | 64K的管道爆裂× 32高速CMOS靜態RAM（64K的× 32位同步脈沖管線高速的CMOS靜態RAM）的 |
| 文件頁數： | 6/17頁 |
| 文件大小： | 313K |
| 代理商： | W25P025A |
W25P025A
- 6 -
Write Table, continued
READ/WRITE FUNCTION
Write byte 4, byte 2
GW
1
BWE
0
BW4
0
BW3
1
BW2
0
BW1
1
Write byte 4, byte 2, byte 1
1
0
0
1
0
0
Write byte 4, byte 3
1
0
0
0
1
1
Write byte 4, byte 3, byte 1
1
0
0
0
1
0
Write byte 4, byte 3, byte 2
1
0
0
0
0
1
Write all bytes I/O1
I/O32
Write all bytes I/O1
I/O32
1
0
0
0
0
0
0
X
X
X
X
X
The ZZ state is a low-power state in which the device consumes less power than in the unselected
mode. Enabling the ZZ pin for a fixed period of time will force the SRAM into the ZZ state. Pulling the
ZZ pin low for a set period of time will wake up the SRAM again. While the SRAM is in ZZ mode, data
retention is guaranteed, but the chip will not monitor any input signal except for the ZZ pin. In the
unselected mode, on the other hand, all the input signals are monitored.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNIT
Core Supply Voltage to Vss
-0.5 to 4.6
V
I/O Supply Voltage to Vss
-0.5 to 4.6
V
Input / Output to V
SSQ
Potential
V
SSQ
-0.5 to V
DDQ
+0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to 150
°
C
°
C
Operating
W25P025AX-n
0 to +70
Temperature
W25P025AX-nF
0 to +85
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
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