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S29WS-N_00_G0 January 25, 2005
Adva nce
Information
The command register and all internal program/erase circuits are disabled, and the device resets
to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system
must provide the proper signals to the control inputs to prevent unintentional writes when VCC is
greater than VLKO.
8.7.4 Write Pulse “Glitch Protection”
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.7.5 Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept com-
mands on the rising edge of WE#. The internal state machine is automatically reset to the read
mode on power-up.
相關PDF資料 |
PDF描述 |
|---|---|
| S29WS128N0LBFI011 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFI012 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFI013 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFI110 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW010 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29WS128N0LBFW012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW110 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW111 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW112 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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