国产精品成人VA在线观看-国产乱妇乱子视频在播放-国产日韩精品一区二区三区在线-国模精品一区二区三区

<thead id="fmvho"><rt id="fmvho"><noscript id="fmvho"></noscript></rt></thead>

您好，
買賣IC網歡迎您。
請登錄
免費注冊

您現在的位置：買賣IC網 > PDF目錄225141 > S29WS128N0LBFW011 (Spansion Inc.) Test Clip; Current Rating:100A; Body Material:Steel; Features:Unmarked; Jaw Opening Max:1.625"; Overall Length:6" RoHS Compliant: NA PDF資料下載

參數資料

型號：	S29WS128N0LBFW011
廠商：	Spansion Inc.
英文描述：	Test Clip; Current Rating:100A; Body Material:Steel; Features:Unmarked; Jaw Opening Max:1.625"; Overall Length:6" RoHS Compliant: NA
中文描述：	256/128/64兆位的CMOS 1.8伏只有同時讀/寫突發模式閃存
文件頁數：	56/99頁
文件大?。?/td>	1091K
代理商：	S29WS128N0LBFW011

4

S29WS-N MirrorBit Flash Family

S29WS-N_00_G0 January25,2005

Adva nce

Information

Figures

S29WS-N Block Diagram..................................................................................................................... 8

84-ball Fine-Pitch Ball Grid Array (S29WS256N, S29WS128N).................................................................10

VBH084—84-ball Fine-Pitch Ball Grid Array (FBGA) 8 x 11.6 mm MCP Compatible Package .........................11

80-ball Fine-Pitch Ball Grid Array (S29WS064N) ....................................................................................12

TLC080—80-ball Fine-Pitch Ball Grid Array (FBGA) 7 x 9 mm MCP Compatible Package...............................13

MCP Look-ahead Diagram ..................................................................................................................15

Synchronous/Asynchronous State Diagram...........................................................................................21

Synchronous Read ............................................................................................................................23

Single Word Program.........................................................................................................................29

Write Buffer Programming Operation ...................................................................................................33

Sector Erase Operation ......................................................................................................................36

Write Operation Status Flowchart ........................................................................................................43

Advanced Sector Protection/Unprotection .............................................................................................50

PPB Program/Erase Algorithm .............................................................................................................53

Lock Register Program Algorithm.........................................................................................................56

Figure 11.1. Maximum Negative Overshoot Waveform .............................................................................................64

Figure 11.2. Maximum Positive Overshoot Waveform...............................................................................................64

Figure 11.3. Test Setup .......................................................................................................................................64

Figure 11.4. Input Waveforms and Measurement Levels...........................................................................................66

Figure 11.5. VCC Power-up Diagram ......................................................................................................................66

Figure 11.6. CLK Characterization .........................................................................................................................68

Figure 11.7. CLK Synchronous Burst Mode Read......................................................................................................70

Figure 11.8. 8-word Linear Burst with Wrap Around.................................................................................................71

Figure 11.9. 8-word Linear Burst without Wrap Around ............................................................................................71

Figure 11.10. Linear Burst with RDY Set One Cycle Before Data ..................................................................................72

Figure 11.11. Asynchronous Mode Read...................................................................................................................73

Figure 11.12. Reset Timings...................................................................................................................................74

Figure 11.13. Chip/Sector Erase Operation Timings ...................................................................................................76

Figure 11.14. Asynchronous Program Operation Timings............................................................................................77

Figure 11.15. Synchronous Program Operation Timings .............................................................................................78

Figure 11.16. Accelerated Unlock Bypass Programming Timing ...................................................................................79

Figure 11.17. Data# Polling Timings (During Embedded Algorithm) .............................................................................79

Figure 11.18. Toggle Bit Timings (During Embedded Algorithm) ..................................................................................80

Figure 11.19. Synchronous Data Polling Timings/Toggle Bit Timings ............................................................................80

Figure 11.20. DQ2 vs. DQ6 ....................................................................................................................................81

Figure 11.21. Latency with Boundary Crossing when Frequency > 66 MHz....................................................................81

Figure 11.22. Latency with Boundary Crossing into Program/Erase Bank ......................................................................82

Figure 11.23. Example of Wait States Insertion ........................................................................................................83

Figure 11.24. Back-to-Back Read/Write Cycle Timings ...............................................................................................84

相關PDF資料	PDF描述
S29WS128N0LBFI011	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI012	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI013	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI110	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW010	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

相關代理商/技術參數	參數描述
S29WS128N0LBFW012	制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW013	制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW110	制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW111	制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW112	制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

發布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

*型號	*數量	廠商	批號	封裝

添加更多采購

我的聯系方式

*

*

*

<sub id="hzoha"><i id="hzoha"></i></sub>

<blockquote id="hzoha"><i id="hzoha"><noscript id="hzoha"></noscript></i></blockquote>