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參數資料
| 型號： | Q62702-A0960 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| 中文描述： | 硅肖特基二極管（星展混頻器應用到12 GHz低噪聲系數中屏障型） |
| 文件頁數： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-A0960 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-A1004 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
| Q62702-A1010 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
| Q62702-A1025 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
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