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參數資料
| 型號： | Q62702-A0960 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| 中文描述： | 硅肖特基二極管（星展混頻器應用到12 GHz低噪聲系數中屏障型） |
| 文件頁數： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-A0960 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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| Q62702-A940 | Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-A1004 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
| Q62702-A1010 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
| Q62702-A1025 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
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