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參數資料
型號: FMMT551
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
中文描述: 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-23, 3 PIN
文件頁數: 1/2頁
文件大小: 105K
代理商: FMMT551
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
60 Volt V
CEO
*
1 Amp continuous current
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FMMT451
551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
-80
V
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
-1
A
Base Current
-200
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
500
mW
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80
V
I
C
=-100
μ
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-60
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-0.1
μ
A
V
CB
=-60V
Emitter Cut-Off Current
I
EBO
-0.1
μ
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.35
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
V
I
C
=-150mA, I
B
=-15mA*
Static Forward Current
Transfer Ratio
h
FE
50
10
150
I
C
=-150mA, V
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150
MHz
I
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
Spice parameter data is available upon request for this device
FMMT551
C
B
E
3 - 129
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