- 您現在的位置：買賣IC網 > PDF目錄375861 > FMMT591 (Electronic Theatre Controls, Inc.) SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | FMMT591 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | SOT23封裝進步黨中功率硅平面晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 130K |
| 代理商： | FMMT591 |
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
Low Equivalent on resistance
R
CE(sat)
=355m
at 1A*
%
COMPLEMENTARY TYPE- FMMT491
PARTMARKING DETAIL - 591
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
-80
V
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
-1
A
Base Current
-200
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
500
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNITCONDITIONS.
Collector-Base Breakdown Voltage
V
(BR)CBO
-80
V
I
C
=-100
μ
A, I
E
=0
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-60
V
I
C
=-10mA, I
B
=0*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A, I
C
=0
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-60V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V, I
C
=0
Collector-Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-60V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.3
-0.6
V
V
I
C
=-500mA,I
=-50mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-1.2
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-1.0
V
I
C
=-1A, V
CE
=-5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
15
300
I
C
=-1mA, V
=-5V*
I
C
=-500mA, V
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition Frequency
f
T
150
MHz I
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
FMMT591
C
B
E
3 - 137
相關PDF資料 |
PDF描述 |
|---|---|
| FMMT591 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| FMMT593 | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| FMMT596 | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| FMMT597 | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| FMMT614 | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FMMT591 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-23 |
| FMMT591A | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-23 制造商:Diodes Incorporated 功能描述:TRANSISTOR, PNP, SOT-23 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:300; No. of Pins:3 ;RoHS Compliant: Yes |
| FMMT591A | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-23 |
| FMMT591ANTA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT591ANTC | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。