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參數資料
| 型號： | W49V002FAQ |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
| 中文描述： | 256K X 8 FLASH 3.3V PROM, 11 ns, PDSO32 |
| 封裝： | 8 X 14 MM, STSOP-32 |
| 文件頁數： | 20/32頁 |
| 文件大?。?/td> | 300K |
| 代理商： | W49V002FAQ |
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W49V002FA
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Timing Waveforms for Programmer Interface Mode, continued
Chip Erase Timing Diagram
DQ[7:0]
AA
55
80
AA
55
10
SB2
SB1
SB0
SB3
SB4
SB5
Internal Erasure Starts
T
WP
T
WPH
T
EC
Note: The internal address A[17:0] are converted from external Column/Row address.
Column/Row Address are mapped to the Low/High order internal address.
i.e. Column Address A[10:0] are mapped to the internal A[10:0],
Row Address A[6:0] are mapped to the internal A[17:11].
(Internal A[17:0])
Six-byte code for 3.3V-only software chip erase
5555
2AAA
5555
5555
2AAA
5555
A[10:0]
#OE
#WE
#C
R/
Sector Erase Timing Diagram
SB2
SB1
SB0
A[10:0]
DQ[7:0]
SB3
SB4
SB5
Internal Erase starts
Six-byte code for 3.3V-only software
sector erase
T
WP
T
WPH
T
EC
5555
2AAA
5555
5555
2AAA
SA
AA
55
80
AA
55
30
SA = Sector Address, Please ref. to the "Table of Command Definition"
Note: The internal address A[17:0] are converted from external Column/Row address.
Column/Row Address are mapped to the Low/High order internal address.
i.e. Column Address A[10:0] are mapped to the internal A[10:0],
Row Address A[6:0] are mapped to the internal A[17:11].
(Internal A[17:0])
#OE
#WE
#C
R/
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相關代理商/技術參數 |
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