
W48C54A/55A
4
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Electrical Characteristics
)
5.0V DC Characteristics
(
0
°
C < T
A
< 70
°
C, V
DD
= 5.0V±10%)
Parameter
Description
Parameter
V
DD
T
STG
T
A
V
IN
P
D
Description
Rating
7.0
Unit
V
V
DD
referenced to GND
Storage Temperature
–
40 to +150
°
C
Operating Temperature
0 to +70
°
C
V on I/O ref to GND
GND
–
5.0 to V
DD
+5.0
0.5
V
Power Dissipation
W
Test Condition
Min
Typ
Max
Unit
V
IL
V
IH
I
IL
I
IH
V
OL
V
OH
V
OH
I
DD
F
D
I
SC
I
DDSTBY
Input Low Voltage
V
DD
= 5.0V
V
DD
= 5.0V
V
IN
= 0V
V
IN
= V
DD
I
OL
= 4 mA
I
OH
=
–
1 mA, V
DD
=5V
I
OH
=
–
4 mA, V
DD
=5V
No load
0.8
V
Input High Voltage
Input Low Current
[2]
2.0
V
–
100
μA
Input High Current
10
μA
Output Low Voltage
0.4
V
Output High Voltage
V
DD
–
0.4
V
DD
–
0.8
V
Output High Voltage
Supply Current
[3]
Output Frequency Change
[4]
V
25
40
mA
Over supply and temperature
0.002
0.01
%
Short Circuit Current
Each output clock
25
40
mA
μ
A
Supply Current, Power
Down
[5]
300
C
IN
C
L
R
P
Notes:
2.
3.
4.
5.
Input Capacitance
Except pins X1, X2
10
pF
Load Capacitance
Pins X1 and X2
20
pF
k
Pull-up Resistor Value
Except X1, X2
250
Includes pull-up resistor.
No output load capacitance, CPU or 2XCPU running at 50 MHz. Power supply current can change with different mask configuration.
Consideration of reference crystal shift only.
With full chip power-down pin LOW.