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參數(shù)資料
| 型號： | W45B012Z |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 1M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 5 X 6 MM, SON-8 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 283K |
| 代理商： | W45B012Z |
Preliminary W45B012
Publication Release Date: April 18, 2002
- 5 -
Revision A1
DC CHARACTERISTICS
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under "Absolute maximum Stress Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation of the device at
these conditions or conditions greater than those defined in the operational sections of this data sheet
is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
PARAMETER
RATING
UNIT
Temperature Under Bias
-55 to +125
°C
Storage Temperature
-65 to +150
°
C
V
D. C. Voltage on Any Pin to Ground Potential
-0.5 to V
DD
+0.5
Transient Voltage (<20 nS) on Any Pin to Ground Potential
-1.0 to V
DD
+1.0
V
Package Power Dissipation Capability (T
A
= 25
°
C)
Surface Mount Lead Soldering Temperature (3 Seconds)
1.0
W
240
°C
Output Short Circuit Current
1
50
mA
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
DC Operating Characteristics
(V
DD
=2.7V
3.6V, V
SS
= 0V, T
A
= 0 to 70
°
C)
LIMITS
PARAMETER
SYM.
TEST CONDITION
MIN.
MAX.
UNITS
Program/Erase
-
30
mA
Power Supply Current
I
DD
f = 20 MHz
#CE = V
IL,
V
DD
= V
DD
Max.
Read
-
20
mA
Standby Current
I
SB
#CE = V
IHC
, V
DD
= V
DD
Max.
-
15
μ
A
μ
A
μ
A
V
V
V
V
Input Leakage
I
LI
V
IN
= GND to V
DD
, V
DD
= V
DD
Max.
-
2
Output Leakage
I
LO
V
OUT
= GND to V
DD
, V
DD
= V
DD
Max.
-
2
Input Low Voltage
V
IL
-0.2
0.6
Input High Voltage
V
IH
2.0
V
DD
+0.3
Output Low Voltage
V
OL
I
OL
= 1.6 mA
-
0.4
Output High Voltage
V
OH
I
OH
= -0.4 mA
2.4
-
Note: Outputs shorted for no more than one second. No more than one output shorted at a time.
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