- 您現在的位置：買賣IC網 > PDF目錄363886 > W3EG7264S-D3 512MB - 64Mx72 DDR SDRAM UNBUFFERED PDF資料下載
參數資料
| 型號： | W3EG7264S-D3 |
| 英文描述： | 512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| 中文描述： | 512MB的- 64Mx72 DDR SDRAM內存緩沖 |
| 文件頁數： | 4/11頁 |
| 文件大小： | 185K |
| 代理商： | W3EG7264S-D3 |
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2005
Rev. 5
W3EG7264S-JD3-D3
PRELIMINARY
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
OS
Value
-0.5 to 3.6
-1.0 to 3.6
-55 to +150
9
50
Units
V
V
°C
W
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
0°C
≤
T
A
≤
70°C; DDR333, 266, 200: V
CC
= V
CCQ
= +2.5V ± 0.2V; DDR400: V
CC
= V
CCQ
= +2.6V ± 0.1V
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
V
IL
V
OH
V
OL
Min
2.3
2.3
1.15
1.15
Max
2.7
2.7
1.35
1.35
Unit
V
V
V
V
V
V
V
V
V
REF
+ 0.15
-0.3
V
TT
+ 0.76
—
V
CCQ
+ 0.3
V
REF
-0.15
—
V
TT
-0.76
CAPACITANCE
T
A
= 25°C. f = 1MHz; DDR333, 266, 200: V
CC
= V
CCQ
= +2.5V ± 0.2V; DDR400: V
CC
= V
CCQ
= +2.6V ± 0.1V
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0, CKE1)
Input Capacitance (CK0#,CK0)
Input Capacitance (CS0#, CS1#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)(DQS)
Data input/output capacitance (CB0-CB7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
Max
32
32
32
32
32
8
32
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
相關PDF資料 |
PDF描述 |
|---|---|
| W3EG7264S-JD3 | 512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| W3EG7265S202JD3 | 512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7265S262JD3 | 512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7265S265JD3 | 512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7265S-JD3 | 512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W3EG7264S-JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx72 DDR SDRAM UNBUFFERED |
| W3EG7265S202JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7265S262JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7265S265JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
| W3EG7265S-JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx72 DDR SDRAM REGISTERED, w/PLL |
發布緊急采購，3分鐘左右您將得到回復。