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參數資料
型號: W3EG264M72EFSU262D4
英文描述: 1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA
中文描述: 1GB的- 2x64Mx72 DDR SDRAM,可緩沖,FBGA封裝
文件頁數: 7/12頁
文件大小: 209K
代理商: W3EG264M72EFSU262D4
W3EG264M72EFSUxxxD4
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
September 2004
Rev. 0
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS
(Continued)
0°C < T
A
<+70°C; V
CC
= V
CCQ
= +2.5V ±0.2V
AC CHARACTERISTICS
403
335
262
265
UNITS NOTES
12
ns
RAMETER
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each
input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per
access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank
a
to ACTIVE bank
b
command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to VDD
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
SYMBOL
t
ISS
t
IPW
MIN
0.8
2.2
MAX
MIN
0.8
2.2
MAX
MIN
1
2.2
MAX
MIN
1
2.2
MAX
ns
t
MRD
t
QH
12
12
15
15
ns
ns
t
HP -
t
QHS
t
HP -
t
QHS
t
HP -
t
QHS
t
HP -
t
QHS
22, 23
t
QHS
t
RAS
t
RAP
t
RC
0.50
70,000
0.50
70,000
0.75
120,000
0.75
120,000
ns
ns
ns
ns
40
15
55
42
18
60
40
15
60
40
20
65
30, 47
t
RFC
t
RCD
t
RP
t
RPRE
t
RPST
t
RRD
t
WPRE
t
WPRES
t
WPST
t
WR
t
WTR
NA
t
REFC
t
REFI
t
VTD
t
XSNR
t
XSRD
70
15
15
0.9
0.4
10
0.25
0
0.4
15
1
72
18
18
0.9
0.4
12
0.25
0
0.4
15
1
75
15
15
0.9
0.4
15
0.25
0
0.4
15
1
78
20
20
0.9
0.4
15
0.25
0
0.4
15
1
t
QH -
t
DQSQ
ns
ns
ns
t
CK
t
CK
ns
t
CK
ns
t
CK
ns
t
CK
ns
μs
μs
ns
42
1.1
0.6
1.1
0.6
1.1
0.6
1.1
0.6
37
37
18, 19
17
0.6
0.6
0.6
0.6
t
QH -
t
DQSQ
t
QH -
t
DQSQ
t
QH -
t
DQSQ
22
21
21
70.3
7.8
70.3
7.8
70.3
7.8
70.3
7.8
0
0
0
0
75
200
75
200
75
200
75
200
ns
t
CK
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W3EG264M72EFSU265D4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA
W3EG264M72EFSU335D4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA
W3EG264M72EFSU403D4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA
W3EG264M72EFSUXXXD4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA
W3EG64128S202AD4 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL