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參數(shù)資料
型號(hào): W39F010T-70B
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 128K 】 8 CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
封裝: 8 X 20 MM, TSOP-32
文件頁數(shù): 3/33頁
文件大小: 227K
代理商: W39F010T-70B
W39F010
Publication Release Date: December 26, 2005
- 3 -
Revision A4
1. GENERAL DESCRIPTION
The
W39F010
is a 1Mbit, 5-volt only CMOS flash memory organized as 128K
×
8 bits. For flexible
erase capability, the 1Mbits of data are divided into 32 small even pages with 4 Kbytes. The byte-wide
(
×
8) data appears on DQ7
DQ0. The device can be programmed and erased in-system with a
standard 5V power supply. A 12-volt V
PP
is not required. The unique cell architecture of the W39F010
results in fast program/erase operations with extremely low current consumption (compared to other
comparable 5-volt flash memory products). The device can also be programmed and erased by using
standard EPROM programmers.
2. FEATURES
y
Single 5-volt operations
5-volt Read
5-volt Erase
5-volt Program
y
Fast Program operation:
Byte-by-Byte programming: 50
μ
S (max.)
y
Fast Erase operation:
Chip Erase cycle time: 100 mS (max.)
Page Erase cycle time: 25 mS (max.)
y
Read access time: 70/90 nS
y
32 even pages with 4K bytes
y
Any individual page can be erased
y
Hardware protection:
Optional 16K byte Top/Bottom Boot Block with lockout protection
y
Flexible 4K-page size can be used as Parameter Blocks
y
Typical program/erase cycles:
1K/10K
y
Twenty-year data retention
y
Low power consumption
Active current: 15 mA (typ.)
Standby current: 15
μ
A (typ.)
y
End of program detection
Software method: Toggle bit/Data polling
y
TTL compatible I/O
y
JEDEC standard byte-wide pinouts
y
Available packages: 32-pin 600 mil DIP, 32-pin PLCC, 32- pin STSOP (8 x 14 mm) and 32- pin
TSOP
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