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參數(shù)資料
| 型號(hào)： | W29EE512P-70B |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 64K X 8 CMOS FLASH MEMORY |
| 中文描述： | 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 9/22頁 |
| 文件大小： | 295K |
| 代理商： | W29EE512P-70B |
W29EE512
Publication Release Date: February 18, 2002
- 9 -
Revision A7
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to V
ss
Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°
C
°
C
V
Storage Temperature
-65 to +150
D.C. Voltage on Any Pin to Ground Potential except A9
-0.5 to V
CC
+1.0
Transient Voltage (
20 nS) on Any Pin to Ground Potential
-1.0 to V
CC
+1.0
V
Voltage on A9 and #OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
CC
= 5.0V
±
10
%
, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN.
TYP. MAX.
Power Supply
Current
I
CC
#CE = #OE = V
IL
, #WE = V
IH
,
all I/Os open
Address inputs = V
IL
/V
IH
, at f = 5 MHz
-
-
50
mA
Standby Vcc Current
(TTL Input)
I
SB
1
#CE = V
IH
, all I/Os open
Other inputs = V
IL
/V
IH
-
2
3
mA
Standby Vcc Current
(CMOS Input)
I
SB
2 #CE = V
CC
-0.3V, all I/Os open
Other inputs = V
CC
-0.3V/GND
-
20
100
μ
A
Input Leakage
Current
I
LI
V
IN
= GND to V
CC
-
-
10
μ
A
Output Leakage
Current
I
LO
V
IN
= GND to V
CC
-
-
10
μ
A
Input Low Voltage
V
IL
-
-
-
0.8
V
Input High Voltage
V
IH
-
2.0
-
-
V
Output Low Voltage
V
OL
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage
V
OH1
I
OH
= -0.4 mA
2.4
-
-
V
Output High Voltage
CMOS
V
OH2
I
OH
= -100
μ
A; V
CC
= 4.5V
4.2
-
-
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W29EE512P-90B | 64K X 8 CMOS FLASH MEMORY |
| W29EE512T-12 | 64K X 8 CMOS FLASH MEMORY |
| W29EE512T-12B | 64K X 8 CMOS FLASH MEMORY |
| W29EE512T-70 | 64K X 8 CMOS FLASH MEMORY |
| W29EE512T-70B | 64K X 8 CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W29EE512P-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512P-90B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-70 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-70B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
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