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參數資料
型號: W29EE011P
廠商: WINBOND ELECTRONICS CORP
英文描述: 128K X 8 CMOS FLASH MEMORY
中文描述: 128K的× 8的CMOS閃存
文件頁數: 11/20頁
文件大小: 183K
代理商: W29EE011P
W29EE011
Publication Release Date: July 1999
- 11 -
Revision A12
Read Cycle Timing Parameters
(V
CC
= 5.0V
±
10
%
, V
CC
= 5.0
±
5
%
for 70 nS, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
W29EE011-90
W29EE011-15
UNIT
MIN.
MAX.
MIN.
MAX.
Read Cycle Time
T
RC
90
-
150
-
nS
Chip Enable Access Time
T
CE
-
90
-
150
nS
Address Access Time
T
AA
-
90
-
150
nS
Output Enable Access Time
T
OE
-
45
-
70
nS
CE
Low to Active Output
T
CLZ
0
-
0
-
nS
OE
Low to Active Output
T
OLZ
0
-
0
-
nS
CE
High to High-Z Output
T
CHZ
-
45
-
45
nS
OE
High to High-Z Output
T
OHZ
-
45
-
45
nS
Output Hold from Address Change
T
OH
0
-
0
-
nS
Byte/Page-write Cycle Timing Parameters
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Write Cycle (Erase and Program)
T
WC
-
-
10
mS
Address Setup Time
T
AS
0
-
-
nS
Address Hold Time
T
AH
50
-
-
nS
WE and CE Setup Time
T
CS
0
-
-
nS
WE and CE Hold Time
T
CH
0
-
-
nS
OE High Setup Time
T
OES
10
-
-
nS
OE High Hold Time
T
OEH
10
-
-
nS
CE Pulse Width
T
CP
70
-
-
nS
WE Pulse Width
T
WP
70
-
-
nS
WE High Width
Data Setup Time
Data Hold Time
T
WPH
150
-
-
nS
T
DS
T
DH
50
10
-
-
-
-
nS
nS
Byte Load Cycle Time
T
BLC
0.22
-
200
μ
S
μ
S
Byte Load Cycle Time-out
T
BLCO
300
-
-
Note: All AC timing signals observe the following guidelines for determining setup and hold times:
(a) High level signal's reference level is V
IH
and (b) low level signal's reference level is V
IL
.
相關PDF資料
PDF描述
W29EE011P-15 Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
W29EE011T-90 128K X 8 CMOS FLASH MEMORY
W29EE011 128K X 8 CMOS FLASH MEMORY
W29EE011-15 128K X 8 CMOS FLASH MEMORY
W29EE01115B 128K X 8 CMOS FLASH MEMORY
相關代理商/技術參數
參數描述
W29EE011P-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29EE011P-15 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE011P15B 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY
W29EE011P15N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29EE011P-90 制造商:Winbond Electronics Corp 功能描述: