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參數資料
| 型號： | W29C512A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64 K x 8 CMOS FLASH MEMORY |
| 中文描述： | 64畝× 8的CMOS閃存 |
| 文件頁數： | 9/20頁 |
| 文件大小： | 265K |
| 代理商： | W29C512A |
W29C512A
Publication Release Date: February 5, 2002
- 9 -
Revision A2
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Power Supply Voltage to V
ss
Potential
-0.5 to +7.0
V
Operating Temperature
0 to +70
°
C
°
C
V
Storage Temperature
-65 to +150
D.C. Voltage on Any Pin to Ground Potential except A9
-0.5 to V
DD
+1.0
Transient Voltage (< 20 nS ) on Any Pin to Ground Potential
-1.0 to V
DD
+1.0
V
Voltage on A9 and #OE Pin to Ground Potential
-0.5 to 12.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
= 5.0V
±
5
%
, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Power Supply
Current
I
CC
#CE = #OE = V
IL
, #WE = V
IH
, all I/Os open
Address inputs = V
IL
/V
IH
, at f = 5 MHz
-
-
50
mA
Standby V
DD
Current (TTL Input)
I
SB
1
#CE = V
IH
, all I/Os open
Other inputs = V
IL
/V
IH
-
2
3
mA
Standby V
DD
Current (CMOS
Input)
I
SB
2
#CE = V
DD
-0.3V, all I/Os open
Other inputs = V
DD
-0.3V /Vss
-
20
100
μ
A
Input Leakage
Current
I
LI
V
IN
= Vss to V
DD
-
-
10
μ
A
Output Leakage
Current
I
LO
V
IN
= Vss to V
DD
-
-
10
μ
A
Input Low Voltage
V
IL
-
-
-
0.8
V
Input High Voltage
V
IH
-
2.0
-
-
V
Output Low Voltage
V
OL
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage V
OH1
I
OH
= -0.4 mA
2.4
-
-
V
Output High Voltage
CMOS
V
OH2
I
OH
= -100
μ
A; V
DD
= 4.5V
4.2
-
-
V
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| W29C512AP-90 | 64 K x 8 CMOS FLASH MEMORY |
| W29C512AT-90 | 64 K x 8 CMOS FLASH MEMORY |
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| W29EE011P-15 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W29C512AP-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64 K x 8 CMOS FLASH MEMORY |
| W29C512AT-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64 K x 8 CMOS FLASH MEMORY |
| W29EE011 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
| W29EE011-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE011-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 CMOS FLASH MEMORY |
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