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參數(shù)資料
型號(hào): W29C040T-90
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 512K X 8 CMOS FLASH MEMORY
中文描述: 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
封裝: TSOP1-32
文件頁數(shù): 12/20頁
文件大小: 261K
代理商: W29C040T-90
W29C040
- 12 -
AC Characteristics, continued
Read Cycle Timing Parameters
(V
DD
= 5.0V
±
10
%
for 90,120 and 150 nS, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
W29C040-90
MIN.
90
-
-
-
-
W29C040-12
MIN.
120
-
-
-
-
UNIT
MAX.
-
90
90
40
25
MAX.
-
120
120
50
30
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
T
RC
T
CE
T
AA
T
OE
T
CHZ
nS
nS
nS
nS
nS
CE High to High-Z Output
OE High to High-Z Output
Output Hold from Address change
T
OHZ
-
25
-
30
nS
T
OH
0
-
0
-
nS
Byte/Page-write Cycle Timing Parameters
PARAMETER
SYMBOL
T
WC
T
AS
T
AH
T
CS
MIN.
-
0
50
0
TYP.
-
-
-
-
MAX.
10
-
-
-
UNIT
mS
nS
nS
nS
Write Cycle (erase and program)
Address Setup Time
Address Hold Time
WE and CE Setup Time
WE and CE Hold Time
T
CH
0
-
-
nS
OE High Setup Time
T
OES
0
-
-
nS
OE High Hold Time
T
OEH
0
-
-
nS
CE Pulse Width
T
CP
70
-
-
nS
WE Pulse Width
T
WP
70
-
-
nS
WE High Width
Data Setup Time
Data Hold Time
Byte Load Cycle Time
T
WPH
100
-
-
nS
T
DS
T
DH
T
BLC
50
0
-
-
-
-
-
-
nS
nS
μ
S
150
Notes:
All AC timing signals observe the following guideline for determining setup and hold times:
(1) High level signal's reference level is V
IH
(2) Low level signal's reference level is V
IL
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