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參數資料
型號: W28V400TT85C
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
中文描述: 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數: 12/48頁
文件大小: 1822K
代理商: W28V400TT85C
W28V400B/T
- 12 -
Table 3.1. Bus Operations (#BYTE = V
IH
) (Note 1, 2)
MODE
#RESET
#CE
#OE
#WE
ADDRESS
V
PP
DQ0
15 RY/#BY(3)
Read (Note 8)
V
IH
or
V
HH
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IL
V
IH
X
X
D
OUT
X
Output Disable
V
IL
V
IH
V
IH
X
X
High Z
X
Standby (Note 10)
V
IH
X
X
X
X
High Z
X
Deep Power-down
(Note 4, 10)
V
IL
X
X
X
X
X
High Z
V
OH
Read Identifier Codes
(Note 8)
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IL
V
IH
See
Figure 4
X
Note 5
V
OH
Write (Note 6, 7, 8)
V
IL
V
IH
V
IL
X
X
DIN
X
Table 3.2. Bus Operations (#BYTE = V
IL
) (Note 1, 2)
MODE
#RESET #CE
#OE #WE
ADDRESS
V
PP
DQ0
7 DQ8
15 RY/#BY(3)
Read (Note 8)
V
IH
or
V
HH
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IL
V
IH
X
X
D
OUT
High Z
X
Output Disable
V
IL
V
IH
V
IH
X
X
High Z
High Z
X
Standby (Note 10)
V
IH
X
X
X
X
High Z
High Z
X
Deep Power-down
(Note 4, 10)
V
IL
X
X
X
X
X
High Z
High Z
V
OH
Read Identifier Codes
(Note 8, 9)
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IL
V
IH
See Figure
4
X
Note 5
High Z
V
OH
Write (Note 6, 7, 8)
V
IL
V
IH
V
IL
X
X
DIN
X
X
Notes:
1. Refer to DC Characteristics. When V
PP
V
PPLK
, memory contents can be read, but not altered.
2. X can be V
IL
or V
IH
for control pins and addresses, and V
PPLK
or V
PPH1/2/3
for V
PP
. See DC Characteristics for V
PPLK
and V
PPH1/2/3
voltages.
3. RY/#BY is V
when the WSM is executing internal block erase or word/byte write algorithms. It is V
during when the WSM
is not busy, in block erase suspend mode (with word/byte write inactive), word/byte write suspend mode or deep power-down
mode.
4. #RESET at V
SS
±
0.2V ensures the lowest deep power-down current.
5. See Read Identifier Codes Command section for details.
6. Command writes involving block erase or word/byte write are reliably executed when V
PP
= V
PPH1/2/3
and V
DD
= V
DD1/2/3/4
. Block
erase or word/byte write with V
IH
< #RESET < V
HH
produce spurious results and should not be attempted.
7. Refer to Table 4 for valid DIN during a write operation.
8. Never hold #OE low and #WE low at the same timing.
9. A-1 set to V
IL
or V
IH
in byte mode (#BYTE = V
IL
).
10. #WP set to V
IL
or V
IH
.
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