- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363877 > W28F641B (WINBOND ELECTRONICS CORP) 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | W28F641B |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY |
| 中文描述： | 64兆比特（的4Mb】16）頁模式的雙工作閃存 |
| 文件頁數(shù)： | 11/31頁 |
| 文件大小： | 389K |
| 代理商： | W28F641B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁
W28F641B/T
Publication Release Date: March 27, 2003
7. Following the third bus cycle, inputs the program sequential address and write data of "N" times. Finally, input the any valid
address within the target block to be programmed and the confirm command (D0H). Refer to Appendix for details.
8. If the program operation in one partition is suspended and the erase operation in other partition is also suspended, the
suspended program operation should be resumed first, and then the suspended erase operation should be resumed next.
9. Full chip erase and OTP program operations can not be suspended. The OTP Program command can not be accepted while
the block erase operation is being suspended.
10. Following the Clear Block Lock Bit command, block which is not locked-down is unlocked when #WP is V
IL
. When #WP is
V
IH
, lock-down bit is disabled and the selected block is unlocked regardless of lock-down configuration.
11. Commands other than those shown above are reserved by Winbond for future device implementations and should not be
used.
Table 7. Functions of Block Lock
(5)
and Block Lock-Down
CURRENT STATE
DQ1
(1)
0
0
1
0
0
1
1
State
[000]
[001]
(3)
[011]
[100]
[101]
(3)
[110]
(4)
[111]
#WP
0
0
0
1
1
1
1
DQ0
(1)
0
1
1
0
1
0
1
State Name
Unlocked
Locked
Locked-down
Unlocked
Locked
Lock-down Disable
Lock-down Disable
ERASE/PROGRAM
ALLOWED
(2)
Yes
No
No
Yes
No
Yes
No
Notes:
1. DQ0 = 1: a block is locked; DQ0 = 0: a block is unlocked.
DQ1 = 1: a block is locked-down; DQ1 = 0: a block is not locked-down.
2. Erase and program are general terms, respectively, to express: block erase, full chip erase and (page buffer) program
operations.
3. At power-up or device reset, all blocks default to locked state and are not locked-down, that is, [001] (#WP = 0) or [101] (#WP
= 1), regardless of the states before power-off or reset operation.
4. When #WP is driven to V
IL
in [110] state, the state changes to [011] and the blocks are automatically locked.
5. OTP (One Time Program) block has the lock function, which is different from those described above.
Table 8. Block Locking State Transitions upon Command Write
(4)
CURRENT STATE
RESULT AFTER LOCK COMMAND WRITTEN (NEXT STATE)
Set Lock
(1)
Clear Lock
(1)
[001]
No Change
No Change
(3)
[000]
No Change
No Change
[101]
No Change
No Change
[100]
[111]
No Change
No Change
[110]
State
[000]
[001]
[011]
[100]
[101]
[110]
[111]
#WP
0
0
0
1
1
1
1
DQ1
0
0
1
0
0
1
1
DQ0
0
1
1
0
1
0
1
Set Lock-down
(1)
[011]
(2)
[011]
No Change
[111]
(2)
[111]
[111]
(2)
No Change
- 11 -
Revision A3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W28F641BB80L | 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BT80L | 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TB80L | 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TT80L | 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28V400B | 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W28F641BB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28NK60Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600 V - 0.155з - 27A TO-247 Zener-Protected SuperMESH MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。