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參數資料
| 型號： | W27C512P-12 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| 中文描述： | 64K X 8 EEPROM 12V, 120 ns, PQCC32 |
| 封裝： | 0.330 INCH, PLASTIC, LCC-32 |
| 文件頁數： | 7/15頁 |
| 文件大小： | 161K |
| 代理商： | W27C512P-12 |
W27C512
Publication Release Date: November 1999
- 7 -
Revision A4
DC Programming Characteristics, continued
PARAMETER
SYM.
CONDITIONS
-
-
I
OL
= 2.1 mA
I
OH
= -0.4 mA
-
-
-
LIMITS
TYP.
-
-
-
-
12.0
12.0
5.0
UNIT
V
V
V
V
V
V
V
MIN.
-0.3
2.4
-
2.4
11.5
11.75
4.75
MAX.
0.8
5.5
0.45
-
12.5
12.25
5.25
Input Low Voltage
Input High Voltage
Output Low Voltage (Verify)
Output High Voltage (Verify)
A9 Silicon I.D. Voltage
V
PP
Program Voltage
V
CC
Supply Voltage (Program)
V
IL
V
IH
V
OL
V
OH
V
ID
V
PP
V
CP
AC PROGRAMMING/ERASE CHARACTERISTICS
(V
CC
= 5.0V
±
5%, T
A
= 25
°
C
±
5
°
C)
PARAMETER
SYM.
T
PRT
LIMITS
TYP. MAX.
-
UNIT
nS
MIN.
50
OE/V
PP
Pulse Rise Time
Data Setup Time
-
T
DS
T
PWP
2.0
95
-
-
μ
S
μ
S
CE Program Pulse Width
100
105
CE Erase Pulse Width
Data Hold Time
T
PWE
95
100
105
mS
T
DH
T
OES
2.0
2.0
-
-
-
-
μ
S
μ
S
OE/V
PP
Setup Time
OE/V
PP
Hold Time
T
OEH
2.0
-
-
μ
S
Data Valid from CE
Data Valid from Address Change
T
DV1
25
-
1
μ
S
T
DV2
T
DFP
25
0
-
-
1
μ
S
nS
CE High to Output High Z
Address Setup Time
Address Hold Time
130
T
AS
T
AH
T
AHC
2.0
0
2.0
-
-
-
-
-
-
μ
S
μ
S
μ
S
Address Hold Time after CE High (Erase)
OE/V
PP
Valid after CE High
T
VS
2.0
-
-
μ
S
OE/V
PP
Recovery Time
Address Access Time During Erase Verify (V
CC
= 3.75V)
Output Enable Access Time during Erase Verify
(V
CC
= 3.75V)
T
VR
2.0
-
-
μ
S
T
ACV
T
OEV
-
-
-
-
250
150
nS
nS
Note: V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
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