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參數資料
| 型號： | W26L04 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 256K×16bit CMOS Static RAM(256K×16位CMOS靜態RAM) |
| 中文描述： | 256K × 16位的CMOS靜態RAM（256K × 16位的CMOS靜態RAM）的 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 158K |
| 代理商： | W26L04 |
Preliminary W26L04
Publication Release Date: December 1999
- 3 -
Revision A1
Operating Characteristics, continued
PARAMETER
SYM.
TEST
3.0V
2.5V
2.0V
UNIT
CONDITIONS
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Output Leakage
Current
I
LO
V
I/O
= V
SS
to V
DD
CS
1 = V
IH
(min.) or
cs
2 = V
IL
(min.)
or
OE
= V
IH
(min.) or
WE = V
IL
(max.)
I
OL
= +2.1 mA at
V
DD
= 3.0V
I
OL
= +0.5 mA at
V
DD
= 2.5V
I
OL
= +0.33 mA at
V
DD
= 2.0V
-1
+1
-1
+1
-1
+1
μ
A
Output Low Voltage
V
OL
-
0.4
-
0.4
-
0.4
V
Output High
Voltage
V
OH
I
OH
= -1.0 mA at
V
DD
= 3.0V
I
OH
= -0.5 mA at
V
DD
= 2.5V
I
OH
= -0.44 mA at
V
DD
= 2.0V
2.4
-
2.0
-
1.5
-
V
Operating Power
Supply Current
I
DD
CS 1 = V
IL
(max.)
cs
2 = V
IH
I/O = 0 mA
Cycle = min.
Duty = 100%
CS2 = V
IL
(min.)
0V
≤
CS2
≤
0.2V
or
CS 1
≥
V
DD
-
0.2V
CS2
≥
V
DD
-0.2V
-
50
-
45
-
35
mA
Standby Power
Supply Current
I
SB
-
0.3
-
0.3
-
0.3
mA
I
SB1
-
5
-
5
-
5
μ
A
CAPACITANCE
(T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
C
IN
C
I/O
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
MAX.
8
10
UNIT
pF
pF
Input Capacitance
Input/Output Capacitance
Note: These parameters are sampled but not 100% tested.
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