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參數資料
| 型號： | W26010AT-20 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數： | 4/10頁 |
| 文件大小： | 158K |
| 代理商： | W26010AT-20 |
W26010A
- 4 -
AC Test Loads and Waveform
R1 480 ohm
5V
OUTPUT
R2
255 ohm
5 pF
R2
255 ohm
R1 480 ohm
5V
OUTPUT
30 pF
Including
Jig and
Scope
90%
90%
3 nS
10%
3 nS
10%
3.0V
0V
Including
Jig and
Scope
)
(For T
T
OLZ,
T
T
WHZ,
T
OW
T
CLZ, BLZ,
CHZ,
BHZ,
T
OHZ,
(V
DD
= 5V
±
10%, V
SS
= 0V, T
A
= 0 to 70
°
C,
I
for –40 to 85
°
C)
Read Cycle
PARAMETER
SYM.
W26010A-15
W26010A-20
W26010A-25
UNIT
MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
T
RC
15
15
20
-
25
-
nS
Address Access Time
T
AA
3
3
20
3
25
nS
Chip Select Access Time
T
ACS
15
20
25
nS
Output Enable to Output Valid
TAOE
7
10
12
nS
#UB, #LB Access Time
T
BA
7
10
12
nS
Output Hold from Address Change
T
OH
7
10
12
nS
Chip Select to Output in Low Z
T
CLZ*
3
3
3
nS
Chip Deselect to Output in High Z
T
CHZ*
0
0
0
nS
Output Enable to Output in Low Z
T
OLZ*
7
10
12
nS
Output Disable to Output in High Z
T
OHZ*
0
0
0
nS
#UB, #LB Select to Output in Low Z
T
BLZ*
nS
#UB, #LB Deselect to Output in High Z
T
BHZ*
7
10
12
nS
These parameters are sampled but not 100% tested.
相關PDF資料 |
PDF描述 |
|---|---|
| W26010AT-25 | 64K 16 HIGH-SPEED CMOS STATIC RAM |
| W26010A | 64K 16 HIGH-SPEED CMOS STATIC RAM |
| W26020A | 128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS靜態RAM) |
| W26020A-20 | 128K X 16 High Speed CMOS Static RAM |
| W26020A-25 | 128K X 16 High Speed CMOS Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W26010AT-25 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K 16 HIGH-SPEED CMOS STATIC RAM |
| W26020A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 High Speed CMOS Static RAM |
| W26020A-20 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 High Speed CMOS Static RAM |
| W26020A-25 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 High Speed CMOS Static RAM |
| W26020AT-20 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 16 High Speed CMOS Static RAM |
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