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參數資料
| 型號： | S29AL016D90BAN012 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 8.15 X 6.15 MM, FBGA-48 |
| 文件頁數： | 8/55頁 |
| 文件大?。?/td> | 1809K |
| 代理商： | S29AL016D90BAN012 |
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16
S29AL016D
S29AL016D_00_A7 November 27, 2007
Da ta
Sh e e t
7.5
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device
requires standard access time (tCE) for read access when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
7.6
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC
Characteristics on page 37 represents the automatic sleep mode current specification.
7.7
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the system
drives the RESET# pin to VIL for at least a period of tRP, the device immediately terminates any operation in
progress, tristates all data output pins, and ignores all read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was
interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure
data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current
will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy) until the
internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is 1), the reset operation is
completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the
RESET# pin returns to VIH.
Refer to the tables in AC Characteristics on page 40 for RESET# parameters and to Figure 17.2 on page 41
for the timing diagram.
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