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參數資料
| 型號： | Q62702-F1132 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| 中文描述： | 硅N溝道MOSFET三極管（對于高頻階段高達300 MHz，最好是在FM應用） |
| 文件頁數： | 6/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1132 |
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
￡
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
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| Q62702-F1189 | NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1144 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
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