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參數資料
| 型號： | MGW14N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件頁數： | 3/6頁 |
| 文件大小： | 154K |
| 代理商： | MGW14N60ED |
3
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS — continued
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
(IF = 10 Adc, VR
(F
dIF/dt = 200 A/
μ
s)
trr
ta
tb
—
75
—
ns
—
31
—
,
—
44
—
Reverse Recovery Stored Charge
QRR
trr
ta
tb
QRR
—
0.16
—
μ
C
Reverse Recovery Time
(IF = 10 Adc, VR
(F
dIF/dt = 200 A/
μ
s, TJ = 125
°
C)
—
139
—
ns
—
45
—
,
—
94
—
Reverse Recovery Stored Charge
—
0.40
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
LE
—
7.5
—
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
6
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
8
0
10
0
13
17
5
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.3
2.1
1.9
1.7
1.5
0
15
I
I
C
V
0
2
4
2
4
6
20
30
7
9
11
25
50
100
75
125
150
I
,
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
25
°
C
VCE = 100 V
5 s PULSE WIDTH
VGE = 15 V
80 s PULSE WIDTH
IC = 10 A
5.0 A
7.5 A
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