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參數資料
| 型號： | MGP7N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 4/6頁 |
| 文件大小： | 144K |
| 代理商： | MGP7N60ED |
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
45
5
RG, GATE RESISTANCE (OHMS)
0.50
0.45
0.40
TJ, JUNCTION TEMPERATURE (
°
C)
150
0.2
0
,
E
0.20
0.15
15
25
0
25
0.4
35
50
75
100
125
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 5.0 A
3.75 A
2.5 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 5.0 A
0.25
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
7
8
0
IC, COLLECTOR CURRENT (AMPS)
0.4
0
2
0.6
0.2
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
RG = 20
4
5
,
E
,
E
0.55
0.60
0.6
0.3
0.1
0.5
0.5
0.1
0.7
0.3
0.8
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1200
800
600
400
200
0
Qg, TOTAL GATE CHARGE (nC)
5
30
0
20
16
12
4
0
5
C
15
25
20
1000
10
15
35
20
25
8
V
,
G
TJ = 25
°
C
IC = 5.0 A
Q1
Q2
QT
VGE = 0 V
TJ = 25
°
C
Cies
Coes
Cres
50
10
GATE RESISTANCE (OHMS)
0.4
0.5
0.3
0.1
0
25
15
20
30
35
40
45
0.2
VCC = 360 V
VGE = 15 V
TJ = 125
°
C
IC = 5.0 A
3.75 A
2.5 A
,
E
0.30
0.35
3.75 A
2.5 A
1
3
6
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