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參數(shù)資料
| 型號： | IRHM4Z60PBF |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 122K |
| 代理商： | IRHM4Z60PBF |
8
www.irf.com
IRHM7Z60
Pre-Irradiation
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L=0.82mH
Peak IL = 35A, VGS =12V
ISD
≤
35A, di/dt
≤
81A/
μ
s,
VDD
≤
30V, TJ
≤
150
°
C
Foot Notes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/01
Case Outline and Dimensions
—
TO-254AA
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
1
2
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
22.73 [.895]
21.21 [.835]
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
3X
4.06 [.160]
3.56 [.140]
B
R 1.52 [.060]
1
2
3
4.82 [.190]
3.81 [.150]
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO J EDEC OUTLINE TO-254AA.
1 = DRAIN
2 = SOURCE
3 = GATE
PIN ASSIGNMENTS
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
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