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參數資料
| 型號： | IRHF58Z30PBF |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 30 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 137K |
| 代理商： | IRHF58Z30PBF |
www.irf.com
3
Radiation Characteristics
IRHF57Z30, JANSR2N7491T2
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA V
DS
= 24V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.024 — 0.03
V
GS
=12V, I
D
=10A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.045 — 0.056
V
GS
=12V, I
D
=10A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHF57Z30 (JANSR2N7491T2), IRHF53Z30 (JANSF2N7491T2) and IRHF54Z30 (JANSG2N7491T2)
2. Part number IRHF58Z30 (JANSH2N7491T2)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS =12A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Cu
28
261 40 30 30 30 25 15
Br
37
285 37 30 30 30 23 15
I
60
344 33 25 25 20
LET
Energy Range
V
DS
(V)
15
8
Table 2. Single Event Effect Safe Operating Area
0
5
10
15
20
25
30
35
-20
-15
-10
-5
0
VGS
V
Cu
Br
I
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