- 您現在的位置：買賣IC網 > PDF目錄360953 > IRGC8B120UB TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP PDF資料下載
參數資料
| 型號： | IRGC8B120UB |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP |
| 中文描述： | 晶體管| IGBT的|正陳| 1.2KV五（巴西）國際消費電子展|芯片 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 15K |
| 代理商： | IRGC8B120UB |
IRGC8B120UB
PD -94317
IRGC8B120UB IGBT Die in Wafer Form
Features
GEN5 Non Punch Through (NPT) Technology
UltraFast
10μs Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benefits
Benchmark Efficiency above 20KHz
Optimized for Welding, UPS, and Induction Heating
Rugged with UltraFast Performance
Excellent Current Sharing in Parallel Operation
Qualified for Industrial Market
10/02/01
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA )
99% Al, 1% Si (4 microns)
0.133" x 0.195"
150mm, with std. < 100 > flat
185 +/- 15 Microns
01-5427
100 Microns
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Recommended Die Attach Conditions
Mechanical Data
Die Outline
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (Min/Max)
2.77V Min., 3.82V Max.
1200V Min.
4.4V Min., 6.0V Max.
5.0 μA Max.
±
1.1 μA Max.
Test Conditions
I
C
= 5.0A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 100μA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
=125μA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-
20V
Collector-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Electrical Characteristics ( Wafer Form )
E
C
G
0.696
[.027]
EMITTER
G
4.953
[.195]
1.953
[.077]
0.701
[.027]
3.378
[.133]
3.473
[.136]
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
4. DIMENSIONAL TOLERANCES:
3. LETTER DESIGNATION:
S = SOURCE
NOTES:
WIDTH
&
LENGTH
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
> [.0250] TOLERANCE = + /- [.0010]
> 0.635 TOLERANCE = + /- 0.025
< [.0250] TOLERANCE = + /- [.0005]
< 0.635 TOLERANCE = + /- 0.013
< 1.270 TOLERANCE = + /- 0.102
&
LENGTH
OVERALL DIE:
WIDTH
BONDING PADS:
SK = SOURCE KELVIN
IS = CURRENTSENSE
G = GATE
E = EMITTER
1200 V
I
C(nom)
= 8A
VCE(on) typ. = 3.63V
@
I
C(nom)
@ 25
°
C
UltraFast IGBT
Short Circuit Rated
150mm Wafer
相關PDF資料 |
PDF描述 |
|---|---|
| IRGCH20SE | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP |
| IRGCH30SE | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP |
| IRGCH40KE | |
| IRGCH40SE | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP |
| IRGCH50FE | |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRGDI520S02 | 功能描述:整流器 250 Volt IRCI RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| IRGI4045DPBF | 功能描述:IGBT 600V 11A W/DIO TO-220AB FP RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRGI4045DPBF | 制造商:International Rectifier 功能描述:SINGLE IGBT 600V |
| IRGI4055PBF | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 36A 3PIN TO-220AB FULLPAK - Bulk |
| IRGI4056DPBF | 功能描述:IGBT 18A 600V W/DIO TO-220FP RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
發布緊急采購，3分鐘左右您將得到回復。