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參數(shù)資料
| 型號： | IRFS41N15DTRL |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 41A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 41A條（丁）|對263AB |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 232K |
| 代理商： | IRFS41N15DTRL |
IRFB/IRFS/IRFSL41N15D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.17 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
2
www.irf.com
Parameter
Min. Typ. Max. Units
18
–––
–––
72
–––
21
–––
35
–––
16
–––
63
–––
25
–––
14
–––
2520 –––
–––
510
–––
110
–––
3090 –––
–––
230
–––
250
Conditions
V
DS
= 50V, I
D
= 25A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
110 I
D
= 25A
31
nC
52
–––
–––
–––
–––
S
V
DS
= 120V
V
GS
= 10V,
V
DD
= 75V
I
D
= 25A
R
G
= 2.5
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 120V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
470
25
20
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
T
J
= 25°C, I
F
= 25A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
170
1.3
1.3
260
1.9
V
ns
μC
Diode Characteristics
41
164
A
Min. Typ. Max. Units
150
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
3.0
–––
–––
–––
–––
––– 0.045
–––
–––
–––
–––
–––
V
V
GS
= 10V, I
D
= 25A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
V
GS
= -30V
5.5
25
250
100
-100
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
°C/W
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