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參數資料
| 型號： | IRFN240 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A) |
| 中文描述： | 功率MOSFET N溝道（BVdss \u003d 200V的電壓，的Rds（on）\u003d 0.18ohm，身份證\u003d 18A條） |
| 文件頁數： | 2/2頁 |
| 文件大小： | 23K |
| 代理商： | IRFN240 |
IRFN240SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 8.8A
I
D
= 13.9A
I
D
= 250
m
A
I
DS
= 8.8A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 13.9A
V
DS
= 0.5BV
DSS
I
D
= 13.9A
V
DD
= 100V
I
D
= 13.9A
R
G
= 9.1
W
I
S
= 13.9A
V
GS
= 0
I
F
= 13.9A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
200
0.29
0.180
0.250
4
2
6.1
25
250
100
–100
1300
400
130
32
60
2.2
14.2
10.6
37.6
20
152
58
67
13.9
56
1.5
500
5.3
Negligible
0.8
2.8
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
相關PDF資料 |
PDF描述 |
|---|---|
| IRFN240SMD | N-CHANNEL POWER MOSFET |
| IRFN250SMD | N-Channel Power MOSFET(Vdss:200V,Id(cont):14A,Rds(on):0.100Ω)(N溝道功率MOS場效應管(Vdss:200V,Id(cont):14A,Rds(on):0.100Ω)) |
| IRFN250 | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) |
| IRFN250SMD | N-CHANNEL POWER MOSFET |
| IRFN340SMD | N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N溝道功率MOS場效應管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFN240SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFN250 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 27.4A 3SMD-1 - Bulk |
| IRFN250SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFN340 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 10A 3SMD-1 - Bulk |
| IRFN340SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
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